| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a silicon compound capable of forming a desired compound in a low-temperature environment, while capable of reducing the number of processes as much as possible. SOLUTION: A member 11 to be etched is formed with a material containing an element which can form a compound with Si while being allocated in the inside of a chamber 1. While forming gas of a precursor 24 which is a compound of the material and halogen by making radical of halogen gas act in the state of holding to high-temperature relatively, the precursor 24 is made to expose the Si interface, and made to be adsorbed to Si interface of the substrate 3 by holding the substrate 3 which is stored in the chamber 1 to relatively low-temperature. The compound of the material and Si is formed by returning the precursor 24 by making radical of the halogen gas act on the precursor 24 made to be adsorbed to the Si interface after that. COPYRIGHT: (C)2007,JPO&INPIT
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