| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce leakage current between the source and the drain in a MOS transistor of a semiconductor memory. <P>SOLUTION: DRAMs are formed on an SOI substrate. The body regions of the transistors Qn1, Qn2, Qp1, Qp2, Qpc, Qe, Qb, Qd, Qm, Qio in a sense amplifier 20, a precharger circuit 23, bit line selector circuits 26A and 26B, a memory cell 27, a dummy cell 28, and a column selector circuit 29 for DRAMs are electrically fixed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
