| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to increase the effective length of a channel by forming a double stepped active region using two-step etching when forming a STAR(Step-Gated Asymmetry Recess) cell structure. A substrate(21) having an isolation layer(22) for defining an active region is prepared. A stepped active region is formed by first etching the active region to have a first depth. A double stepped active region is formed by second etching edge portions of the stepped active region to have a second depth, wherein the second depth is shallower than the first depth. A gate insulating layer(23), a gate conductive layer and a hard mask layer(26) are sequentially formed on the resultant structure and sequentially etched, thereby forming a gate(27) of STAR structure.</p> |
