THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor and a method for manufacturing a thin film transistor substrate are provided to simplify the manufacturing process, by simultaneously etching three semiconductor layers using a single mask to form ohmic contact layers, low doped drain layers, and a semiconductor layer. A gate electrode(124) is formed on a substrate(110). An insulating layer(140) is formed on the gate electrode. A first semiconductor layer(154) is formed on the insulating layer, and includes intrinsic polycrystalline silicon. A pair of second semiconductor layers(153,155) are formed on the first semiconductor layer, and separated from each other. A pair of ohmic contact layers(161,165) are formed on the second semiconductor layers. Source and drain electrodes(173,175) are formed on the ohmic contact layers.