| 摘要 |
A method for forming a hard mask of a semiconductor memory device is provided to prevent the sidewall attack of a second poly hard mask by forming a protection layer at the sidewalls of the second poly hard mask. A first dielectric hard mask(112) and a second poly hard mask(114) are sequentially deposited on an etch target layer of a substrate(100). After the second poly hard mask is etched using a photoresist pattern as a mask, a protection layer(118) is formed at sidewalls of the second poly hard mask. The photoresist pattern is removed, and the resultant structure is cleaned.
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