发明名称 |
Nano-air-bridged lateral overgrowth of GaN semiconductor layer |
摘要 |
A technique for growing a high quality gallium nitride layer on a uniform nano-patterned substrate is described. The invented technique is based on the transfer of ordered nano-patterns from a nano-template to the substrate, followed by the growth of gallium nitride on the nano-patterned substrate. The nano-patterned substrate serves as a buffer layer to reduce the stress and dislocations.
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申请公布号 |
US2006270201(A1) |
申请公布日期 |
2006.11.30 |
申请号 |
US20060434399 |
申请日期 |
2006.05.15 |
申请人 |
CHUA SOO J;WANG YADONG;ZANG KEYAN |
发明人 |
CHUA SOO J.;WANG YADONG;ZANG KEYAN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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