| 摘要 |
A phase change memory device and a method for manufacturing the same are provided to restrain etch damage when forming a metal pad and a ground line by isolating between a GST(Ge,Sb,Te) cell region and a ground voltage supply region. A substrate(21) has a GST cell region and a ground voltage supply region. An isolation layer(23) is formed in the substrate to define a T-type active region(22). Word lines(24) are crossed to the T-type active region. A junction region is formed in the active region of both sides of the word line. A first tungsten plug is formed on the GST cell region, and a second tungsten plug is formed on the ground voltage supply region. A dot-type metal pad(28) is formed on the GST cell region to contact the first tungsten plug, and a bar-type ground line(29) is formed on the ground voltage supply region to contact the second tungsten plug. A GST cell composed of a lower electrode and a GST layer is formed on the metal pad of the GST cell region.
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