发明名称 METHOD OF FORMING CONDUCTIVE LINE OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a conductive line of a semiconductor element by which operation characteristics and reliability of the element are improved. SOLUTION: The method includes a stage of forming a photosensitive film pattern defining a conductive line region in an upper part of a semiconductor substrate having a conductive layer and a hard mask layer, a stage of forming a hard mask layer pattern by etching the hard mask layer with the photosensitive film pattern as a mask, a stage of removing the photosensitive film pattern, and a stage of etching the conductive layer with the hard mask layer pattern as a mask. The stages are advanced in-situ. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006324615(A) 申请公布日期 2006.11.30
申请号 JP20050202923 申请日期 2005.07.12
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIM SEUNG BUM;NAM KI WON
分类号 H01L21/3213;H01L21/28;H01L21/3065 主分类号 H01L21/3213
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