HIGH-FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier which makes an enough breakdown resistance and an excellent high-frequency characteristic compatible. SOLUTION: A high-frequency signal RF is input each into bases of transistors TR1 to TRn via capactors C1 to Cn is amplified, and is output from collectors of the transistors TR1 to TRn. Emitters of each transistor TR1 to TRn are grounded. A bias voltage DC given from a bias circuit Bias is supplied to the bases of the transistors TR1 to TRn each through resistances Ra1 to Ran. A signal line of the bias voltage DC is connected to an input line of the high-frequency signal RF in a direct-current manner through a bridge resistance R. COPYRIGHT: (C)2007,JPO&INPIT