| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a stress adjustment layer which applies a tensile distortion or compression distortion in a channel direction to cope with a high performance, and can easily be formed; and to provide its manufacturing method. SOLUTION: On one face of semiconductor layers (12a, 12b) having a channel formation area in a transistor area, gate electrodes (15a, 15b) are formed through gate insulating films (14a, 14b) at positions corresponding to the channel formation areas, and source-to-drain areas (16a, 16b) are formed so as to connect with the channel formation area in a semiconductor layer. With this arrangement, stress adjustment layers (21, 23) which apply a stress to the semiconductor layer are formed on another face of the semiconductor layer, so as to oppose to the gate electrode across the semiconductor layer at the position corresponding to the channel formation area. COPYRIGHT: (C)2007,JPO&INPIT
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