Semiconductor layer structure and method of fabricating it

摘要

Semiconductor layer structure, contains monocrystalline silicon carbide layer (4,4b) on a silicon wafer, with diameter of the silicon wafer (1) of at least 150 mm. The silicon carbide layer exhibits a surface roughness of at the most 0.5 Nm RMS and a certain micropipe density and beyond that it is free from any defects, which arise with the crystal growth or with a epitaxial deposition. An independent claim is also included for producing a semiconductor layer structure.