发明名称 SIDE-EMITTING LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
摘要 A side-emitting light emitting diode and a fabricating method thereof are provided to reduce remarkably thickness of a wall of an LED by forming the wall of the LED with a substrate. A concave part(108) is formed on a semiconductor substrate. A lower metal layer(102) and an upper metal layer(104) are formed on both sides of the semiconductor substrate. A second upper metal layer(112a) is used for covering a wall face of concave part and the first upper metal layer. An LED chip(120) is disposed within the concave part. A transparent sealing part(130) is used for sealing the LED chip. A first and a second upper metal layer assembly are divided into two isolated parts to form an electrode. The LED chip is electrically connected with the electrode.
申请公布号 KR20060121611(A) 申请公布日期 2006.11.29
申请号 KR20050043867 申请日期 2005.05.24
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE, SEON GOO;HAHM, HUN JOO;SONG, CHANG HO;PARK, JUNG KYU;HAN, KYUNG TAEG
分类号 H01L33/48;H01L33/00;H01L33/54 主分类号 H01L33/48
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