| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to suppress a pattern short effect by removing an interfering part between patterns. A pad oxide layer and a pad nitride layer are formed on a silicon substrate(21). A photosensitive layer pattern is formed on the pad nitride layer. The pad nitride layer is etched by using the photoresist layer pattern. A trench having a positive slope is formed by etching the pad oxide layer and the substrate. A burial oxide layer(24) is formed to bury the trench. The pad nitride is exposed by performing a CMP process for the burial oxide layer. The pad nitride layer and the pad oxide layer are removed therefrom. A part of a surface of the burial oxide layer and a part of a surface of the substrate are etched to obtain a desired critical dimension.
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