METHOD FOR FABRICATING NONVOLATIBLE MEMORY DEVICE

摘要

A method for fabricating a non-volatile memory device is provided to eliminate the necessity of an additional process by forming a buffer layer with a material to be used as a spacer in a subsequent process such that the buffer layer protects a floating gate, an oxide layer, and a part of a tunnel insulation layer in an ion implantation process for forming a common source region. A pair of floating gates(114a) are formed on a semiconductor substrate(100). A tunnel insulation layer(132a) is formed under a control gate(134a) overlapping a part of the floating gate. A buffer layer(150) is conformally formed along the resultant structure having a thickness of 100-150 angstroms. An ion implantation process is performed on the semiconductor substrate between the pair of floating gates to form a common source region(104) overlapping a part of the floating gate. A spacer insulation layer is deposited on the buffer layer. The buffer layer and the spacer insulation layer are anisotropically etched to form a spacer on the sidewall of the control gate and the floating gate. A drain region is formed in the semiconductor substrate at both sides of the control gate. The spacer insulation layer can be a nitride layer.