发明名称 One-level zero-current-state exclusive or (XOR) gate
摘要 Aspects of the invention provide a fast one level zero-current-state XOR gate. An embodiment of the invention provides a first pair of differentially configured transistors and a level shifting resistor coupled to the first pair of differentially configured transistors. The one level zero-current-state XOR gate may also include a second pair of differentially configured transistors. A core of the XOR gate may be coupled to outputs of the first and the second pairs of differentially configured transistors.
申请公布号 US7142013(B2) 申请公布日期 2006.11.28
申请号 US20050133723 申请日期 2005.05.20
申请人 BROADCOM CORPORATION 发明人 YIN GUANGMING
分类号 H03K19/21;H03D13/00;H03F3/45;H04L7/033 主分类号 H03K19/21
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