发明名称 |
Dual work function CMOS gate technology based on metal interdiffusion |
摘要 |
A gate structure for a MOSFET device comprises a gate insulation layer, a first layer of a first metal abutting the gate insulation layer, and a second layer overlying the first layer and comprising a mixture of the metal of the first layer and a second metal, the metal layers formed by the diffusion of the first metal into and through the second metal. The second metal can be used as the gate for a n-MOS transistor, and the mixture of first metal and second metal overlying a layer of the first metal can be used as a gate for a p-MOS transistor where the first metal has a work function of about 5.2 eV and the second metal has a work function of about 4.1 eV.
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申请公布号 |
US7141858(B2) |
申请公布日期 |
2006.11.28 |
申请号 |
US20040871338 |
申请日期 |
2004.06.18 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
POLISHCHUK IGOR;RANADE PUSHKAR;KING TSU-JAE;HU CHENMING |
分类号 |
H01L29/49;H01L21/28;H01L21/8238 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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