| 摘要 |
A narrow channel MOS(metal oxide semiconductor) transistor having an additional gate conductive pattern is provided to improve the performance of a MOS transistor without increasing a fabricating cost by eliminating the necessity of performing an additional process for improving driving current capability or changing a process itself. A MOS transistor(20) is made of a metal oxide semiconductor. A channel which has a width of W0 and a length of L0 is prepared. An active region(24) includes a source region(24s) and a drain region(24d) that are formed at both sides of the channel. A gate insulation layer is formed on the channel. A gate conductor(22) is formed on the gate insulation layer, crossing the active region and including a connection pattern, an additional pattern(22b) and a channel pattern(22c). The connection pattern forms a gate connection part(23) that electrically connects the gate conductor to the outside. The additional pattern disposed in parallel with the active region in the source region and the drain region, connected to the connection pattern and separated from the active region by a uniform distance. The channel pattern defines the length of the channel, connected as a T type to the additional pattern. The additional pattern and the gate conductor can be simultaneously formed.
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