| 摘要 |
A method for forming a metal line of a semiconductor device is provided to decrease resistance of the metal line and to reduce electro-migration fail and stress-migration fail by using a barrier metal made of tungsten. A first interlayer dielectric, an etch stop layer, a second interlayer dielectric, and a hard mask are sequentially formed on a semiconductor substrate with a lower metal line. A dual damascene pattern for exposing the lower metal line to the outside is formed on the resultant structure, wherein the dual damascene pattern is composed of a via hole and a trench. An ionic layer and a barrier metal are sequentially formed along an upper surface of the resultant structure. A copper film is filled in the dual damascene pattern alone in order to form a metal contact plug and an upper metal line(32). A metal capping layer(34) is formed on the upper metal line.
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