METHOD OF DEPOSITING THIN FILM USING POLARITY TREATMENT

摘要

A method for depositing a thin film by using polarization is provided to adjust a degree that a precursor is absorbed on the surface of a semiconductor substrate along a stepped portion according to polarity of the precursor by performing a hydrophilic or hydrophobic polarization treatment on the surface of the semiconductor substrate. After the surface of a semiconductor substrate having a stepped portion is polarized, An absorption layer of a first precursor is formed on the substrate. The absorption layer of the first precursor reacts with a second precursor to deposit a thin film. An Al-containing organic or inorganic compound is used as the first precursor and an O-containing organic or inorganic compound is used as the second precursor so that an Al2O3 thin film is deposited.