发明名称 ELECTRONIC ELEMENT AND THIN-FILM SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a substrate for forming a single crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, which consists of a sintered compact composed mainly of a ceramic material, and to obtain a thin-film substrate with the single crystal thin film formed thereon, and an electronic element such as a light emitting element having excellent luminous efficiency. <P>SOLUTION: The sintered compact composed mainly of a ceramic material, especially translucent sintered compact is used as the substrate to form a highly crystalline single crystal thin film composed mainly of at least one or more kinds selected from among gallium nitride, indium nitride and aluminum nitride, on the substrate. Thus, a thin-film substrate with the highly crystalline single crystal thin film formed thereon is provided. Further, an electronic element such as a light emitting element excellent in luminous efficiency is provided by using the sintered compact composed mainly of a ceramic material. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006315951(A) 申请公布日期 2006.11.24
申请号 JP20060154476 申请日期 2006.06.02
申请人 MIYAHARA KENICHIRO 发明人 MIYAHARA KENICHIRO
分类号 C30B29/38;C23C14/06;C23C16/34;C30B25/18;G02B6/12;H01L33/16;H01L33/32 主分类号 C30B29/38
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