| 摘要 |
A semiconductor device having an improved fuse line structure is provided to effectively reduce the cross section of a fuse line by forming a curve on the fuse line. A semiconductor device includes a region where at least one fuse cut off by an electrical signal is disposed. An interlayer dielectric(111) is formed on a semiconductor substrate(110). A fuse line(120) is formed on the interlayer dielectric, cut off by an electrical signal. A medium layer(151) is inserted into the lower part of the fuse line to form at least one curve on the fuse line so that the fuse line has a high resistance characteristic in a region where the fuse line is cut off. The medium layer is made of one medium layer wherein a part of the medium layer is positioned in a cut-off region of the fuse line.
|
