| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative resist composition having sensitivity to a g-line, an i-line, a KrF excimer laser and an electron beam and usable in a mix and match process where exposure is performed using at least two kinds of exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam, and to provide a resist pattern forming method. <P>SOLUTION: The negative resist composition used in a process where exposure is performed using at least two kinds of exposure light sources selected from a g-line, an i-line, a KrF excimer laser and an electron beam contains an alkali-soluble resin component (A), an acid generator component (B) which generates an acid upon irradiation with a g-line, an i-line, a KrF excimer laser and an electron beam, and a crosslinker component (C). <P>COPYRIGHT: (C)2007,JPO&INPIT |
