| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated diode which can be manufactured through manufacturing processes that are simplified. <P>SOLUTION: The laminated diode is equipped with a p-type, an i-type, and an n-type semiconductor layers or an n-type, an i-type, and a p-type semiconductor layers which are laminated between a lower electrode 4 and an upper electrode (ITO10). The upper surface of the lower electrode 4 is subjected to plasma processing in gas doped with a dopant which turns the upper surface of the lower electrode 4 into a prescribed conductivity-type, and the contact surface of a non-doped semiconductor layer 5 provided on the plasma-processed surface of the lower electrode 4 is turned into the above prescribed conductivity-type. <P>COPYRIGHT: (C)2007,JPO&INPIT |
