PLASMA GENERATING EQUIPMENT

摘要

Plasma generating equipment is provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10), and generates inductively coupled plasma by applying high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna composed of a first part (11) extending from the outside of the chamber (10) to the inside of the chamber (10), and a plurality of second parts (12), which are branched electrically parallel from a chamber inner side edge part (11e) of the first part (11) with end edges (12e) directly connected to an inner wall of the grounded chamber (10). The surface of the antenna (1) is covered with an electrically insulating material. The frequency of the high-frequency power applied to the antenna may be as high as approximately 40MHz to several 100MHz, and desired plasma can be generated by suppressing problems such as abnormal electrical discharge and matching failure. The equipment can be also constituted for process of film formation and the like.