SWITCHING ELEMENT, REWRITABLE LOGIC INTEGRATED CIRCUIT, AND MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a switching element which is set at a higher switching voltage than usual.

SOLUTION: The switching element is composed of an ion conductive layer 23 containing an tantalum oxide, a first electrode 21 provided in contact with the ion conductive layer 23, and a second electrode 22 which is provided in contact with the ion conductive layer 23 and capable of feeding metal ions into the ion conductive layer 23.

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