| 摘要 |
PROBLEM TO BE SOLVED: To provide an electro-absorption modulator with improved extinction characteristics and to provide a semiconductor device with the electro-absorption modulator formed. SOLUTION: A resistance R1 in a first semiconductor layer region including a guide layer 105, a clad layer 106 and a contact layer 107b from the upper part of an InGaAsP light absorbing layer 104 to an anode 109b in an electro-absorption modulator MD is controlled to be different from a resistance R2 in a second semiconductor layer region including the guide layer 110, the clad layer 106 and the contact layer 107b. By decreasing the resistance R1 in a part where a photocurrent Iph1 is large and increasing the resistance R2 in a part where a photocurrent Iph2 is low, a voltage applied to the InGaAsP light absorbing layer 104 can be nearly uniformized in a propagation direction D1 of light, and the extinction characteristics are improved. A semiconductor device having the electro-absorption modulator formed therein can be obtained. COPYRIGHT: (C)2007,JPO&INPIT |
