发明名称 |
METHOD FOR THE MANUFACTURE OF A NON-VOLATILE FERROELECTRIC MEMORY DEVICE AND MEMORY DEVICE THOUS OBTAINED |
摘要 |
The present invention relates to non- volatile ferroelectric memory devices (30) comprising a transistor (22) and a capacitor (23), and more particularly to non-volatile electrically erasable programmable ferroelectric memory elements, and a method for processing such non-volatile ferroelectric memory devices (30). The method according to the invention comprises a limited number of mask steps because a gate dielectric layer of the transistor (22) and a dielectric layer of the capacitor (23) are made from the same organic or inorganic ferroelectric layer (14). |
申请公布号 |
KR20060120220(A) |
申请公布日期 |
2006.11.24 |
申请号 |
KR20067012474 |
申请日期 |
2006.06.22 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
MARSMAN ALBERT W.;DE LEEUW DAGOBERT M.;GELINCK GERWIN H. |
分类号 |
H01L27/105;H01L21/02;H01L21/312;H01L21/316;H01L21/77;H01L21/8239;H01L21/8246;H01L21/84;H01L27/115;H01L27/12;H01L27/13;H01L51/00;H01L51/05;H01L51/30 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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