发明名称 |
APPPARATUS FOR ADJUSTING THRESHOLD VOLTAGE OF MOS TRANSISTOR AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a means for adjusting the effective threshold voltage of a MOS transistor to a desired value. SOLUTION: A reference voltage generating circuit is used for generating a primary voltage signal. A threshold voltage monitoring circuit including a MOS transistor measures the effective threshold voltage of the MOS transistor and is used for generating a secondary voltage signal. A feedback circuit compares the primary voltage signal with the secondary voltage signal and adjusts the effective threshold voltage of the MOS transistor so that the primary voltage signal may become substantially equal to the secondary voltage signal. The effective threshold voltage of the MOS transistor is adjusted by adjusting source-body potential. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006319372(A) |
申请公布日期 |
2006.11.24 |
申请号 |
JP20060224217 |
申请日期 |
2006.08.21 |
申请人 |
NATIONAL SEMICONDUCTOR CORP |
发明人 |
MERRILL RICHARD BILLINGS;FARRENKOPF DOUG ROBERT |
分类号 |
H01L21/822;G05F3/24;G11C5/14;G11C11/408;H01L21/8234;H01L27/04;H01L27/088;H03K19/094 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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