发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To realize a Zener diode which has a breakdown voltage that is kept high and stable and is small in chip size. SOLUTION: Zener diodes each include a pn junction composed of an n-layer 2 and a p-layer 4, each provided with a back electrode 6 electrically connected to the n-layer 2, and each provided with a surface electrode 5 electrically connected to the p-layer 4. A first, a second, a third and a fourth semiconductor wafer, W1 to W4 are prepared where the Zener diodes are provided, the surface electrodes 5 and the back electrodes 6 are positioned to each other, the semiconductor wafers W1 to W4 are stuck together, and then the semiconductor wafers are cut into separate chips, whereby a laminated Zener diodes ZD1 can be formed where four Zener diodes are stacked up in a longitudinal direction. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006319029(A) 申请公布日期 2006.11.24
申请号 JP20050138251 申请日期 2005.05.11
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMAGUCHI YASUSHI
分类号 H01L29/866;H01L21/301;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L29/866
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