| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the connection stability of a capacitive element and a diffusion layer. <P>SOLUTION: The semiconductor device 100 has a DRAM section 102, including a transistor consisting of a first diffusion layer 108 formed in a silicon substrate 101, a gate electrode 118 formed on the silicon substrate 101, and a second diffusion layer 106 provided on the side opposite to the first diffusion layer 108, while holding the gate electrode 118 in between. The semiconductor device 100 also includes an MIM capacitor 122, consisting of a metal upper electrode 128, a capacitor insulating film 126, and a metal lower electrode 124 and formed on the silicon substrate 101. Furthermore, the semiconductor device 100 includes a capacitor contact layer 147 for electrically connecting the first diffusion layer 108 and the metal lower electrode 124. The capacitor contact layer 147 consists of a first elevated source/drain layer 146, and a first silicide layer 148 provided on the upper part of the first elevated source/drain layer 146, in contact therewith. <P>COPYRIGHT: (C)2007,JPO&INPIT |
