发明名称 MATERIAL FOR FORMING INSULATING FILM WITH LOW DIELECTRIC CONSTANT
摘要 PROBLEM TO BE SOLVED: To improve the mechanical strength of an insulating film with low dielectric constant made of a porous film. SOLUTION: A solution for forming the insulating film with low dielectric constant comprises a silicon resin 2, fine particles 3 principally composed of a silicon atom and an oxygen atom and having a large number of pores, and a solvent 4. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006316284(A) 申请公布日期 2006.11.24
申请号 JP20060214409 申请日期 2006.08.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAGAWA HIDEO;SASAKO MASARU
分类号 C08L101/00;C08K3/34;C08L83/04;H01L21/312;H01L21/316 主分类号 C08L101/00
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