发明名称 |
MATERIAL FOR FORMING INSULATING FILM WITH LOW DIELECTRIC CONSTANT |
摘要 |
PROBLEM TO BE SOLVED: To improve the mechanical strength of an insulating film with low dielectric constant made of a porous film. SOLUTION: A solution for forming the insulating film with low dielectric constant comprises a silicon resin 2, fine particles 3 principally composed of a silicon atom and an oxygen atom and having a large number of pores, and a solvent 4. COPYRIGHT: (C)2007,JPO&INPIT
|
申请公布号 |
JP2006316284(A) |
申请公布日期 |
2006.11.24 |
申请号 |
JP20060214409 |
申请日期 |
2006.08.07 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAGAWA HIDEO;SASAKO MASARU |
分类号 |
C08L101/00;C08K3/34;C08L83/04;H01L21/312;H01L21/316 |
主分类号 |
C08L101/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|