| 摘要 |
A method for manufacturing a semiconductor device is provided to restrain SAC(Self Align Contact) fail by forming a tungsten film with a relatively high etch selectivity on a gate hard mask nitride layer. A gate insulating layer(22) and a gate conductive layer(23) are sequentially formed on a substrate(21). A nitride layer(24) and a tungsten film(25) as a gate hard mask are sequentially formed on the gate conductive layer. A stacked gate(26) is then formed by patterning the tungsten film, the nitride layer, the gate conductive layer and the gate insulating layer. An interlayer dielectric(29) is formed on the resultant structure and polished to expose the tungsten film. Contact holes(31) are formed to expose the substrate between the gates by etching the interlayer dielectric. The exposed tungsten film is selectively removed. A plug conductive layer is then filled in the contact hole.
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