METHOD FOR DETECTING NUISANCE DEFECT ACCORDING TO INCREASE OF SENSITIVITY IN SEMICONDUCTOR EQUIPMENTS

摘要

A method for detecting a nuisance defect according to the increase of sensitivity in semiconductor equipment is provided to remove effectively the nuisance defect in spite of a high degree of integration of a semiconductor device. A defect is detected from a wafer, wherein the wafer is applied with a predetermined process without SAT(Segmented Auto Threshold). A wafer phase defect is detected from the wafer by using a manual SAT. Another DOI(Defect Of Interest) is detected from the wafer by using a modification SAT. A wafer region with an increased nuisance defect state according to the application of the modification SAT is applied with a wise NF(Nuisance Filter). The increased nuisance defects are removed from the wafer by using the wise NF. A minor defect is detected from the wafer by using the combination of the modification SAT and the wise NF.