发明名称 Phase change memory and manufacturing method thereof
摘要 Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.
申请公布号 US2006261379(A1) 申请公布日期 2006.11.23
申请号 US20050272751 申请日期 2005.11.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUKAMOTO TAKAYUKI;NAITO KATSUYUKI;ASHIDA SUMIO
分类号 H01L29/768 主分类号 H01L29/768
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