发明名称 |
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same |
摘要 |
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
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申请公布号 |
US2006261347(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20050132355 |
申请日期 |
2005.05.18 |
申请人 |
RYU SEI-HYUNG;JENNY JASON R;DAS MRINAL K;HOBGOOD HUDSON M;AGARWAL ANANT K;PALMOUR JOHN W |
发明人 |
RYU SEI-HYUNG;JENNY JASON R.;DAS MRINAL K.;HOBGOOD HUDSON M.;AGARWAL ANANT K.;PALMOUR JOHN W. |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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