| 摘要 |
<p>An SONOS(substrate-oxide-nitride-oxide-silicon) memory cell fabricating method capable of preventing a top oxide layer from being deteriorated is provided to protect an upper oxide layer from subsequent processes that deteriorate the oxide layer, by depositing a polysilicon layer for a first gate immediately after an ONO layer is deposited in a cell region. A bottom oxide layer, a silicon nitride layer and an upper oxide layer are sequentially deposited on a semiconductor substrate(100). A first gate layer is formed on the ONO layer. The first gate layer and the ONO layer are sequentially patterned to form a first gate(311) and an ONO layer pattern(201) in a cell region. A gate dielectric layer(270) is formed on the semiconductor substrate exposed to the first gate. A second gate layer(330) is formed on the gate dielectric layer. The second gate layer is patterned to form a second gate in a peripheral circuit region. The gate dielectric layer can be extended to cover and protect the first gate.</p> |
