发明名称 |
Compound semiconductor film, solar cell, and methods for producing those |
摘要 |
A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate ( 11 ); a conductive layer ( 12 ) formed on the substrate ( 11 ); a light-absorption layer ( 13 ) that is formed on the conductive layer ( 12 ) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film ( 14 ) formed on the light-absorption layer ( 13 ); and a transparent conductive layer ( 16 ) formed on the compound semiconductor film ( 14 ). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.
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申请公布号 |
US2006261383(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20050560801 |
申请日期 |
2005.12.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
HASHIMOTO YASUHIRO;SATOH TAKUYA;NEGAMI TAKAYUKI |
分类号 |
H01L29/80;H01L31/0336;H01L31/072;H01L31/0749 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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