发明名称 Compound semiconductor film, solar cell, and methods for producing those
摘要 A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate ( 11 ); a conductive layer ( 12 ) formed on the substrate ( 11 ); a light-absorption layer ( 13 ) that is formed on the conductive layer ( 12 ) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film ( 14 ) formed on the light-absorption layer ( 13 ); and a transparent conductive layer ( 16 ) formed on the compound semiconductor film ( 14 ). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.
申请公布号 US2006261383(A1) 申请公布日期 2006.11.23
申请号 US20050560801 申请日期 2005.12.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 HASHIMOTO YASUHIRO;SATOH TAKUYA;NEGAMI TAKAYUKI
分类号 H01L29/80;H01L31/0336;H01L31/072;H01L31/0749 主分类号 H01L29/80
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