| 摘要 |
A method for manufacturing a semiconductor device is provided to simplify the process by a hard mask of a single layer by using an LCD-CVD oxide film. A gate oxide film(202), a poly silicon film(204), and a tungsten film(206) are sequentially formed on a semiconductor substrate(200). A hard mask(208) is formed on the tungsten film using an oxide film, which is formed by an LP-CVD method. After the hard mask is patterned, the tungsten film, the poly silicon film, and the gate oxide film are etched using the patterned hard mask. The hard mask is formed by using a batch type low pressure chemical vapor deposition device. The formation process of the hard mask using the batch type low pressure chemical vapor deposition device includes loading a wafer on which the tungsten film is formed, removing all oxygen gas, and supplying material gas after increasing a temperature to a deposition temperature to form the hard mask.
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