Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate

摘要

There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step (S10)); and cleaning (S20). In the step of cleaning (S20), a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.