| 摘要 |
<p>The present invention provides a method for removal of boron from metal silicon inexpensively and extremely efficiently by a simple method, specifically, heating metal silicon containing boron as an impurity to its melting point to 2200°C to place it in a molten state, then adding a solid mainly comprised of silicon dioxide and a solid mainly comprised of one or both of a carbonate of an alkali metal or a hydrate of a carbonate of an alkali metal into said molten silicon so as to form a slag and remove the boron in the silicon.</p> |
