| 摘要 |
A conductor pattern 3 on an insulative substrate 10 having a semiconductor chip 4 and a heat sink plate 8 are joined with a Sn-Sb-Ge solder alloy 9 containing 3 to 5 wt% of antimony (Sb), not more than 0.2 wt% of germanium (Ge), and the balance of tin (Sn). The semiconductor chip 4 and a conductor pattern 2 on the insulative substrate 10 may be joined with the same type of solder alloy 5. The semiconductor chip 4 and a wiring conductor 6 may be joined with the same type of solder alloy 7. |
