发明名称 GYRO EMPLOYING SEMICONDUCTOR LASER
摘要 <p>A semiconductor laser gyro including a photodetector and a semiconductor laser 10 that emits first and second laser lights. The photodetector is disposed in a position where interference fringes are formed by the first and second laser lights. The semiconductor laser 10 includes an active layer as well as first and second electrodes 13 and 14 for injecting carriers into the active layer. The first laser light is one obtained through emission of a part of laser light (L1) that circulates on a polygonal path in the active layer. The second laser light is one obtained through emission of a part of laser light (L2) that circulates on the polygonal path in the opposite direction to the laser light (L1).</p>
申请公布号 EP1724552(A1) 申请公布日期 2006.11.22
申请号 EP20050719840 申请日期 2005.03.02
申请人 ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL 发明人 HARAYAMA, TAKAHISA;FUKUSHIMA, TAKEHIRO
分类号 G01C3/08;G01C19/66 主分类号 G01C3/08
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