| 摘要 |
A cantilever for a probe type information storage device and a method for manufacturing the same are provided to make the thickness of the cantilever uniform by forming a body of the cantilever of a silicon nitride, thereby preventing the breakage of the cantilever due to excessive stress. A silicon nitride body has a first portion fixed onto a supporter(11) and a second portion floating. A thermal resistance type sensor(12) is formed on an end of the second portion of the silicon nitride body. A tip(13) for recording and reproducing information is protruded from the silicon nitride body, wherein the tip(13) is disposed on the thermal resistance type sensor(12), or apart from the thermal resistance type sensor(12) at a predetermined distance. An electrode wire(14) is formed on the silicon nitride body, and supplies the electricity to the thermal resistance type sensor(12) and the tip(13).
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