| 摘要 |
<p>A flash memory device is provided to improve data retention and endurance properties by forming a floating gate in a moat located at both edges of an isolation layer. A semiconductor substrate(10) is defined with a field region and an active region. A tunnel oxide layer(12) is formed on the active region and the adjacent field region. An isolation layer(11) having a shallow trench structure is formed in a substrate of the field region, wherein the isolation layer has a moat at both sides of the tunnel oxide layer. A floating gate(13) is formed on the tunnel oxide layer and the isolation layer to fill the moat. A dielectric film(14) and a control gate(15) are sequentially formed on the resultant structure.</p> |
