NAND FLASH MEMORY DEVICE AND METHOD FOR FABRICATING NAND FLASH MEMORY DEVICE

摘要

A NAND flash memory device and a method for manufacturing the same are provided to prevent GIDL(Gate Induced Drain Leakage) due to hot carriers by forming an oxide layer in a substrate of both sides of a gate in a source select transistor. A drain select transistor(DST), a source select transistor(SST), and a plurality of memory cell transistors(MC1-MC6) are formed on a semiconductor substrate. The memory cell transistors are formed between the drain select transistor and the source select transistor. An oxide layer(66) is formed in the surface of the substrate of both sides of a gate in the source select transistor.