METHOD OF FORMING A GATE IN FLASH MEMORY DEVICE

摘要

A method for forming a gate of a flash memory device is provided to prevent the oxidation of a floating gate and a control gate by using a buffer oxide layer. A floating gate(16) and a control gate(20) are stacked on a semiconductor substrate(10). A buffer oxide layer(24) for preventing oxidation is formed on the resultant structure including the exposed surface of the floating gate and the control gate. Annealing is then performed to compensate the damage when forming the gates. The buffer oxide layer is one selected from a group consisting of SiO2, Al2O3, TaO, and HfO.