| 摘要 |
A method for forming a contact plug of a semiconductor device is provided to restrain the generation of voids in a metal film forming process by making a first upper surface of the contact plug protruded from a second upper surface of an interlayer dielectric using a selective etching process on the interlayer dielectric. Source/drain junction regions(101) are formed in a semiconductor substrate(100). An interlayer dielectric(102) with a contact hole is formed on the resultant structure. A contact plug(103) is filled in the contact hole of the interlayer dielectric. A wet etching process is selectively performed on the interlayer dielectric, so that the contact plug is protruded from the interlayer dielectric. A metal film(104) is then formed on the resultant structure.
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