发明名称 |
Cleaning gas and etching gas |
摘要 |
A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF<SUB>4</SUB>, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.
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申请公布号 |
US7138364(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20030480285 |
申请日期 |
2003.12.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
OHIRA YUTAKA;MITSUI YUKI;YONEMURA TAISUKE;SEKIYA AKIRA |
分类号 |
B08B9/00;B08B7/00;C09K13/00;C09K13/08;C23C16/44;H01L21/205;H01L21/306;H01L21/3065;H01L21/311 |
主分类号 |
B08B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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