| 摘要 |
<p>A method for manufacturing a MOSFET device is provided to increase channel length and to prevent a leakage current of a junction by partially etching a substrate of an active region. A semiconductor substrate has an active region defined by an isolation layer. The active region has a groove formed at a drain forming region and an adjacent channel forming region. Stepped gates(90) are formed at both sides of the groove. A source/drain region(100) is formed in the substrate of the both sides of the gate. The groove is provided with a vertical first groove(60) located at the lower part of the substrate, and a second groove(80) of pot shape located at the lower part of the first groove.</p> |
