NON-VOLATILE FERROELECTRIC MEMORY DEVICE

摘要

A nonvolatile ferroelectric memory device is provided to control stably read/write operations of a nonvolatile memory cell by using the variation of a channel resistance according to a polarization state of a ferroelectric film. An insulating layer(11) is formed on a bottom word line(10). A floating channel layer(15) is formed on the insulating layer. The floating channel layer is composed of an N type channel region(12) and N type drain/source regions at both sides of the N type channel region. A ferroelectric film(16) is formed on the channel region of the floating channel layer. A word line(17) is formed on the ferroelectric film. Data read/write operations are controlled by inducing various channel resistances to the channel region in response to a polarization state of the ferroelectric film.